Remote plasma chemical vapour deposition of silicon nitride films
نویسندگان
چکیده
The relatively new technique of remote plasma enhanced
منابع مشابه
Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملRemote plasma-enhanced chemical vapour deposition of silicon nitride at atmospheric pressure
Silicon nitride films were deposited using an atmospheric pressure plasma source. The discharge was produced by flowing nitrogen and helium through two perforated metal electrodes that were driven by 13.56 MHz radio frequency power. Deposition occurred by mixing the plasma effluent with silane and directing the flow onto a rotating silicon wafer heated to between 100 ̊C and 500 ̊C. Film growth ra...
متن کاملHydrogen Passivation of Interstitial Iron in Silicon by Annealing with Pecvd Silicon Nitride Films
This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found ...
متن کاملCharacterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channel
In order to reach high level of transistor performances, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in conduction channel is to generate strain in the structure induced by process. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhan...
متن کاملPlasma diagnostics and device properties of AlGaN / GaN HEMT passivated with SiN deposited by plasma enhanced chemical vapour deposition ( PECVD )
In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016